2SD2575

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 q Low collector to emitter saturation voltage VCE(sat). s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Measuring (Ta=25˚C) Ratings 15 10 10 9 5 750 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C Symbol VCBO VCEO VEBO ICP*1 IC PC Tj Tstg 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A time: t = 380µsec s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 VCE = 5V, IB = 0 VEB = 5V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A* VCE = 2V, IC = 2A* IC = 3A, IB = 0.1A* VCB = 6V, IE = –50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz 10 10 700 195 0.28 170 45 * min typ max 0.1 1.0 0.1 Unit µA µA µA V V 0.5 V MHz 65 pF Pulse measurement 1 Transistor PC — Ta 1000 6 Ta=25˚C 5 IB=5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 2 1.0mA 2SD2575 IC — VCE Collector to...