TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
2SD2604
High-Power Switching Applications Ham...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (Darlington)
2SD2604
2SD2604
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 95 V
Collector-emitter voltage
VCEO
110 ± 15
V
Emitter-base voltage
VEBO 5 V
Collector current
DC Pulse
IC
5 A
ICP 10
Base current
IB 0.7 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ ≈ 150 Ω Emitter
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
2SD2604
Characteristics Collector cut-off cur...