2SD2604 Type Transistor Datasheet

2SD2604 Datasheet, PDF, Equivalent


Part Number

2SD2604

Description

Silicon NPN Triple Diffused Type Transistor

Manufacture

Toshiba Semiconductor

Total Page 5 Pages
Datasheet
Download 2SD2604 Datasheet


2SD2604
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
2SD2604
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min)
Low saturation voltage: VCE (sat) = 1.5 V (max)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 95 V
Collector-emitter voltage
VCEO
110 ± 15
V
Emitter-base voltage
VEBO 5 V
Collector current
DC
Pulse
IC
5
A
ICP 10
Base current
IB 0.7 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
5 kΩ ≈ 150
Emitter
1 2006-11-21

2SD2604
Electrical Characteristics (Tc = 25°C)
2SD2604
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 90 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 3 V, IC = 2 A
VCE = 3 V, IC = 5 A
IC = 2 A, IB = 4 mA
IC = 2 A, IB = 4 mA
Min
0.75
95
2000
1000
Typ. Max
100
3.0
110 125
15000
――
0.9 1.5
1.5 2.5
Unit
μA
μA
V
V
V
Turn-on time
Switching time Storage time
ton
Input IB1
tstg
20 μs
IB2
Output
0.5
5.0
μs
Fall time
VCC 40 V
tf
IB1 = IB2 = 4 mA, duty cycle 1%
0.7
Marking
D2604
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21


Features TOSHIBA Transistor Silicon NPN Triple Di ffused Type (Darlington) 2SD2604 2SD26 04 High-Power Switching Applications H ammer Drive, Pulse Motor Drive Applicat ions Unit: mm • High DC current gai n: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Absol ute Maximum Ratings (Tc = 25°C) Chara cteristics Symbol Rating Unit Colle ctor-base voltage VCBO 95 V Collector -emitter voltage VCEO 110 ± 15 V E mitter-base voltage VEBO 5 V Collecto r current DC Pulse IC 5 A ICP 10 B ase current IB 0.7 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 20 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA S C-67 TOSHIBA 2-10R1A Weight: 1.7 g ( typ.) Note: Using continuously under h eavy loads (e.g. the application of hig h temperature/current/voltage and the significant change in temperature, etc. ) may cause this product to decrease i n the reliability significantly even if the operating conditions (i.e. operat.
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