2SD2620J

Transistors 2SD2620J Silicon NPN epitaxial planer type Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 For low-frequency amplification I Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) High emitter to base voltage VBEO SS-mini type package 0.12+0.03 –0.01 3 1.60±0.05 0.85+0.05 –0.03 (0.375) 1 0.27±0.02 2 (0.80) (0.50)(0.50) 0 to 0.02 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 100 100 15 50 20 125 125 −55 to +125 Unit V V V mA mA mW °C °C 5° 0.70+0.05 –0.03 5° 1: Base 2: Emitter 3: Collector EIAJ: SC-81 SS-Mini Type Package Marking Symbol: 3B I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage VCBO VCEO VEBO hFE VCE(sat) fT NV Conditions VCB = 60 V, IE = 0 VCE = 60 V, IB = 0 IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = −2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GB = 80 dB Rg = 100 kΩ, Function = FLAT 100 100 15 400 0.05 200 80 1 200 0.2 V MHz mV Min Typ Max 0.1 1.0 Unit µA...