2SD401
GENERAL DESCRIPTION
SILICON EPITAXAL PLANAR TRANSISTOR
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS VBE = 0V MIN MAX 200 150 2 20 1.5 2.0 UNIT V V A A W V V s
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A
1.5
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55 -
Tmb 25
MAX 200 150 5 2 0.5 20 150 150
UNIT V V V A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf
PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time
CONDITIONS VCB=200V VEB=5V IC=1mA IC = 1.5A; IB = 0.15A IC = 500mA; VCE = 5V IC = 0.5A; VCE = 12V VCB = 10V
MIN 150 50 5
MAX 0.2 0.2 1.5 250 75
UNIT mA mA V V MHz pF us us us
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail:
[email protected]
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