2SD476AK

2SD476(K), 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SD476(K) 70 50 5 4 8 40 150 –55 to +150 2SD476A(K) 70 60 5 4 8 40 150 –55 to +150 Unit V V V A A W °C °C 2SD476(K), 2SD476A(K) Electrical Characteristics (Ta = 25°C) 2SD476(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO Min 70 50 5 — 60 35 — — — — — — Typ — — — — — — — — 7 0.3 3.0 2.5 Max — — — 1 200 — 1.0 1.2 — — — — 2SD476A(K) Min 70 60 5 — 60 35 — — — — — — Typ — — — — — — — — 7 0.3 3.0 2.5 Max — — — 1 200 — 1.0 1.2 — — — — V V MHz µs µs µs VCE = 4 V, IC = 0.5 A VCC = 10.5 V I C = 10 IB1 = –10 IB2 = 0.5 A Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 1 A (Pulse test) VCE = 4 V, IC = 0.1 A I C = 2 A, IB = 0.2 A DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) Gain bandwidth...