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DSEC60-06A

IXYS Corporation

Epitaxial Diode

DSEC 60-06A DSEC 60-06B HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 30 A VRRM = 600 V ...


IXYS Corporation

DSEC60-06A

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DSEC 60-06A DSEC 60-06B HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 30 A VRRM = 600 V trr = 30/35 ns TO-247 AD VRSM V 600 600 VRRM V 600 600 Type DSEC 60-06A DSEC 60-06B A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM Conditions rect., d = 0.5; TC (Vers. A) = 135°C TC (Vers. B) = 125°C TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Both Versions Maximum Ratings 70 30 A A Features 250 0.2 0.1 -55...+175 175 -55...+150 A mJ A °C °C °C W Nm g q q q q q IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 165 0.8...1.2 6 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C Characteristic max. Values Vers. A Vers. B 250 1 1.25 1.60 0.9 0.25 250 2 1.56 2.51 0.9 0.25 typ. 30 typ. 4 mA mA V V K/W K/W ns A q q VF y RthJC RthCH trr IRM q q q IF = 1 A; -di/dt = 200 A/ms; VR = ...




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