DSEP30-06CR

DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) Preliminary Data VRSM V 600 VRRM V 600 DSEP 30-06CR Type A C IFAV = 30 A VRRM = 600 V trr = 20 ns ISOPLUS 247TM C A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 135°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 tbd 300 1.2 0.3 -55...+175 175 -55...+150 A A A A mJ A °C °C °C W V~ N g q q q q Features q TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 250 2500 20...120 6 q q q q q Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Applications q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 250 1 1.79 2.46 0.6 0.25 20 4.5 7.0 µA mA V V K/W K/W ns A q q q VF y RthJC RthCH trr IRM q q q q with heatsink compound IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°...