DSF11060SG

DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS s Snubber Diode For GTO Circuits KEY PARAMETERS VRRM 6000V IF(AV) 400A IFSM 4200A Qr 700µC trr 6.0µs FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 6000 5800 5600 5500 Conditions DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 VRSM = VRRM + 100V Lower voltage grades available. Outline type code: M779b. See Package Details for further information. CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 400 631 585 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 265 420 365 A A A 1/6 DSF11060SG SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing 57.8 x 103 A2s 88 x 103 3.4 A2s kA Conditions Max. 4.2 Units kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Cla...