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DSF20060SF55

Dynex Semiconductor

Fast Recovery Diode

DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 APPLICATIONS...


Dynex Semiconductor

DSF20060SF55

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Description
DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 APPLICATIONS s Inverters s Choppers s Inverse Parallel Diode s Freewheel Diode KEY PARAMETERS VRRM 6000V IF(AV) 780A IFSM 7800A Qr 1400µC trr 6.5µs FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 6000 5800 5600 5500 Conditions DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 VRSM = VRRM + 100V Lower voltage grades available. Outline type code: CB450. See Package Details for further information. CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 620 960 840 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 412 645 535 A A A 1/6 DSF20060SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 125oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 125oC I2t for fusing 205 x 103 A2s 300 x 103 6.4 A2s kA Conditions Max. 7.8 Units kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case S...




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