DT451AN

DT451AN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A B Dim A B C D E Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 — 10° 0.254 10° Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.356 16° D C D G E D S G H G P R S H J K L M N P R S J K L M N Mechanical Data · · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above 25°C unless otherwise specified Symbol VDSS VGSS Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 30 ±20 ±7.2 ±25 3.0 1.3 1.1 -65 to +150 All Dimensions in mm Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Maximum Power Dissipation Characteristic Unit V V A W °C Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1 Symbol RQJA RQJC Value 42 12 Unit °C/W °C/W Notes: 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W. 1c. With 0.0123...