DT452AP

DT452AP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 — 10° 0.254 10° Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10° 16° 0.356 16° A B C D E D C D G E J K D S G H G P R S H J K L M N P R S L M N Mechanical Data · · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above 25°C unless otherwise specified Symbol VDSS VGSS Note 1a Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value -30 -20 -5.0 -15 3.0 1.3 1.1 -65 to +150 All Dimensions in mm Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Maximum Power Dissipation Characteristic Unit V V A W °C Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Notes: design. 1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W. 1b. With 0.066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W. Note 1 Symbol RQJA RQJC Value 42 12 Unit °C/W °C/W 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC is guarantee...