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DTA114EET1 Dataheets PDF



Part Number DTA114EET1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bias Resistor Transistor
Datasheet DTA114EET1 DatasheetDTA114EET1 Datasheet (PDF)

DTA114EET1 SERIES Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device..

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DTA114EET1 SERIES Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–75/SOT–416 package which is designed for low power surface mount applications. http://onsemi.com Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTORS • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC–75/SOT–416 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm, 7 inch/3000 Unit Tape & Reel COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc 2 mAdc 1 3 DEVICE MARKING AND RESISTOR VALUES Device DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1 Marking 6A 6B 6C 6D 6E 6F 6H 6K 6L 6M R1 (K) 10 22 47 10 10 4.7 2.2 4.7 22 2.2 R2 (K) 10 22 47 47 ∞ ∞ 2.2 47 47 47 Shipping 3000/Tape & Reel CASE 463 SOT–416/SC–75 STYLE 1 Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 May, 2000 – Rev. 0 Publication Order Number: DTA114EET1/D DTA114EET1 SERIES THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR–4 Board (1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (1.) Total Device Dissipation, FR–4 Board (2.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (2.) Junction and Storage Temperature Range Symbol PD 200 1.6 RθJA PD 300 2.4 RθJA TJ, Tstg 400 –55 to +150 mW mW/°C °C/W °C 600 mW mW/°C °C/W Max Unit ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0) DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143ZET1 DTA124XET1 DTA123JET1 ICBO ICEO IEBO — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 0.18 0.13 0.2 — — nAdc nAdc mAdc Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector–Emitter Breakdown Voltage (3.) V(BR)CBO V(BR)CEO Vdc Vdc (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (3.) DTA114EET1 DTA12.


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