DTA114YE

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DTA114YE/D Preliminary Data Sheet Bias Resistor Transistor DTA114YE 3 2 1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 11 4 Y E i s h o u s e d i n t h e SOT–416/SC–90 package which is ideal for low–power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel. IN (1) R1 R2 CASE 463–01, STYLE 1 SOT–416/SC–90 OUT (3) GND (2) R1 = 10 kΩ R2 = 47 kΩ MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Output Voltage Input Voltage Output Current Symbol VO VI IO Value – 50 –40 –100 Unit Vdc Vdc mAdc DEVICE MARKING DTA114YE = 59 THERMAL CHARACTERISTICS Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Input Off Voltage (VO = –5.0 Vdc, IO = –100 µAdc) Input On Voltage (VO = –0.3 Vdc, IO = –1.0 mAdc) Ou...