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DTA114E SERIES Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications.
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Preferred Devices
PNP SILICON BIAS RESISTOR TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C (1.) Derate above 25°C Symbol VCBO VCEO IC PD 350 2.81 mW mW/°C Value 50 50 100 Unit Vdc Vdc mAdc 2 BASE
COLLECTOR 3
1 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL 260 10 Value 357 –55 to +150 Unit °C/W °C
1 2 3
°C Sec
DEVICE MARKING AND RESISTOR VALUES
Device DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z Marking DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 Shipping 5000/Box
CASE 29 TO–92 (TO–226) STYLE 1
Preferred devices are recommended choices for future use and best overall value.
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
© Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 0
Publication Order Number: DTA114E/D
DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0) DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z ICBO ICEO IEBO — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 — — nAdc nAdc mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (2.)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z hFE 35 60 80 80 160 160 3.0 8.0 15 80 — 60 100 140 140 250 250 5.0 15 27 140 — — — — — — — — — — — 0.25 Vdc
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y (IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E (IC = 10 mA, IB = 5 mA) DTA123E (IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/ (IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTA114E DTA124E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA144E
VCE(sat)
VOL — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) DTA114T DTA113T DTA144E DTA114Y DTA143Z DTB113E DTA114T DTA143T DTA123E DTA143E DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA114E/DTA124E/DTA144E DTA114Y DTA114T/DTA143T DTB113E/DTA123E/DTA143E DTA143Z R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 0.8 0.17 — 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 1.0 0.21 — 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 1.2 0.25 — 1.2 0.185 kΩ Symbol VOH Min 4.9 Typ — Max — Unit Vdc
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
Input Resistor
Resistor Ratio
R1/R2
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DTA114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS DTA114E
250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 TA = –25°C 75°C 0.1
200
25°C
150
100 RθJA = 625°C/W 50
0 –50
0
50
100
150
0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC
1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V
4 f = 1 MHz lE = 0 V TA = 25°C
TA = 75°C 100 25°C –25°C
Cob , CAPACITANCE (pF) 100
3
2
1
10
1
10 IC, COLLECTOR CURRENT (mA)
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
25°C TA = –25°C
100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
10
TA = –25°C 10.