DTA1E

Ordering number : EN2283B Silicon Planar Type DTA1 1.0A Bidirectional Thyristor Features Low AC power control use. Peak OFF-state voltage : 200 to 400V RMS ON-state current : 1A TO-92 package. Absolute Maximum Ratings at Ta=25°C Repetitive Peak OFF-StateVoltage RMS ON-State Current Surge ON-State Current Amperes Squared-Seconds Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Junction Temperature Strage Temperature Weght VDRM IT(RMS) ITSM ∫ i2T·dt PGM PG(AV) IGM VGM Tj Tstg Tc=74°C, single-phase full-wave Peak 1 cycle, 50Hz 1ms≤t≤10ms f≥50Hz, duty≤10% f≥50Hz, duty≤10% f≥50Hz, duty≤10% DTA1C 200 → → → → → → → → DTA1E 400 1.0 unit V A A A2s W W A V °C °C g max 10 1.5 10 5 5 unit µA V mA mA mA mA mA V V V V V °C/W 8 0.32 1 0.1 ±0.5 ±6 125 –40 to +125 → 0.2 min typ Electrical Characteristics at Ta=25°C Repetitive Peak OFF-State Current Peak ON-State Voltage Holding Current Gate Trigger Current* (I) (II) (III) (IV) Gate Trigger Voltage* (I) (II) (III) (IV) Gate Nontrigger Voltage Thermal Resistance IDRM VTM IH IGT IGT IGT IGT VGT VGT VGT VGT VGD Rth(j-c) Tj=25°C, VD=VDRM ITM=1.5A VD=12V, gate open VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω Tc=125°C, VD=VDRM Between junction and case, AC 10 5 2 2 – 2 – 40 2 0.2 * : The gate trigger mode is shown below. Trigger mode I II III IV T2 + + – – T1 – – + + G + – + – Package Dimensions 1192B (unit : ...