DTD114GK

DTD114GK NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Parameter VCEO IC R Value 50V 500mA 10kW lFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary PNP Types :DTB114GK 5) Lead Free/RoHS Compliant. lOutline SMT3 Collector Base Emitter DTD114GK SOT-346 (SC-59) lInner circuit lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. Package DTD114GK SMT3 Package size (mm) 2928 Taping code T146 Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 180 8 3,000 Marking L24 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.11 - Rev.C DTD114GK lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC Pd *2 Tj Tstg Data Sheet Values 50 50 5 500 200 150 -55 to +150 Unit V V V mA mW °C °C lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC= 50mA Collector-emitter breakdown voltage BVCEO...