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RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz
Features
N-Channel Enhancement Mode Dev...
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RF MOSFET Power
Transistor, 6OW, 12V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications
DU1260T
v2.00
Absolute Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
Specifications
Subject to Change Wiihout Notice.
M/A-COM,
inc.
Tel. (800) 366-2266 Fax (800) 618-8883
n
North America:
Asia/Pacific:
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor, 6OW, 12V
DU1260T
VZDO
Typical Broadband Performance Curves
DRAIN EFFICIENCY vs FREQUENCY
V,p12
GAIN vs FREQUENCY
V,,=12
25
V I,,=600 mA PO,=60 W
V I,,=600
mA Po~60
W
20
3 s z 2
15
.I
10
5
0
0
50
FREQUENCY(W)
150
200
25
50
100
150
175
FREQUENCY(W)
POWER OUTPUT vs POWER INPUT
V&2
POWER OUTPUT vs SUPPLY VOLTAGE
601 I
I,,=600
60
V I,=600 mA
mA F=175 MHz P,,=&O W I
”
0.1
0.2
0.3
1
2
3
4
5
6
7
POWER INPUT(W)
SUPPLY VOLTAGE(V)
Specifications Subject to Change Wiout
Notice.
MIA-COM, Inc.
North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor,
6OW,
12V
DUI 260T
v2.00
Typical Device Impedance
Frequency (MHz) 30
100
2;, (OHMS) 4.5 - j 8.0
1.4-j...
