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RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
DU2820S
Absolute Maximum Ratings at 25°C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current...
