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DU28200 Dataheets PDF



Part Number DU28200
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz
Datasheet DU28200 DatasheetDU28200 Datasheet (PDF)

an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65.

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an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65 20 20 I v V A I 1 P, TJ T STG / 389 200 -65 to +150 1 W “C “C 1 Electrical Characteristics Parameter at 25°C Test Conditions Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current 1 Gate Threshold Voltage FonvardTransconductance Input Capacitance Output Capacitance ( Reverse Capacitance Power Gain Drain Efficiency Load MismatchTolerance * Per Side Specifications BVDss ‘cm ‘GSS I vG,rr,, GM CISS COSS I CFSS GP 65 5.0 5.0 V n-IA pA 1 v S pF pF 1 pF dB % - V,,=O.O V, I,,=250 mA V,,=28.0 V, V,,=O.O V‘ v,,=20.0 v, V,stO.O v I v,,=~o.ov, V,,=lO.O 1 2.0 2.5 - 1 6.0 225 200 1,,=500.0 mA V, I,,=50 A, ~v,,=l .O V, 80~ I Pulse’ Vr,,=28.0 V, F=l .OMHz’ V,,=28.0 V, F=l .O MHz’ 1 V,,=28.0 V, F=l.O MHz’ V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz I 1 13 55 - ( 40 lo:1 % VSWR-T V,,=28.0 V. I,,=1 000 mA, P,, -200.0 W, F=175 MHz V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz Subject to Change Without Notice. RF MOSFET Power Transistor, 2OOW, 28V DU28200M v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY 30 V&3 V l,o=lOO mA EFFICIENCY W 6or vs FREQUENCY mA P,,=200 W P,f200 VDD=28 V I,,=1000 10 -I 25 50 50 100 150 200 25 50 loo FRECXJENCY (MHz) 150 200 FREQUENCY (MHz) POWER OUTPUT V,,=28 300 vs POWER INPUT V IDp=l 000 mA 100 MHz MHz z 5 P 5 a cl0 ; 250 30 MHz 200 200 150 100 f f . 50 0 0.5 1 2 3 4 5 POWER INPUT (W) RF MOSFET Power Transistor, 2OOW, 28V DU28200M v2.00 Typical Device Impedance Frequency (MHz) 30 100 150 175 200 Z,N(OHMS) 2.7 - j 4.8 1.6 -j 3.0 1.5 -j 2.0 1.6 -j 1.0 1.8-j0.5 V,,=28 V, I,,=1000 mA, P0,~200 Watts Z LOAD (OHMS) 7.2 - j 1.9 5.25 - j 1.4 5.0 - j 0.7 5.2 - j 0.6 5.5 - j 0.5 I I Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD is the series optimum equivalent load impedance as measured from drain to drain. RF Test Fixture Specifications Subject to Change Without Notice. .


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