DU28200M

an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65 20 20 I v V A I 1 P, TJ T STG / 389 200 -65 to +150 1 W “C “C 1 Electrical Characteristics Parameter at 25°C Test Conditions Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current 1 Gate Threshold Voltage FonvardTransconductance Input Capacitance Output Capacitance ( Reverse Capacitance Power Gain Drain Efficiency Load MismatchTolerance * Per Side Specifications BVDss ‘cm ‘GSS I vG,rr,, GM CISS COSS I CFSS GP 65 5.0 5.0 V n-IA pA 1 v S pF pF 1 pF dB % - V,,=O.O V, I,,=250 mA V,,=28.0 V, V,,=O.O V‘ v,,=20.0 v, V,stO.O v I v,,=~o.ov, V,,=lO.O 1 2.0 2.5 - 1 6.0 225 200 1,,=500.0 mA V, I,,=50 A, ~v,,=l .O V, 80~ I Pulse’ Vr,,=28.0 V, F=l .OMHz’ V,,=28.0 V, F=l .O MHz’ 1 V,,=28.0 V, F=l.O MHz’ V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz I 1 13 55 - ( 40 lo:1 % VSWR-T V,,=28.0 V. I,,=1 000 mA, P,, -200.0 W, F=175 MHz V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz Subject to Change Without Notice. RF MOSFET Power Transistor...