*
an AMP company
=zs.--E-= -=----
.-----= -
E
RF MOSFET 2 - 175 MHz
Features
Power Transistor,
6OW, 28V
DU2860T
v...
*
an AMP company
=zs.--E-= -=----
.-----= -
E
RF MOSFET 2 - 175 MHz
Features
Power
Transistor,
6OW, 28V
DU2860T
v2.00
-*-
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
. .
Absolute Maximum Ratings at 25°C
Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America:
CISS Coss CRSS GP % VSWR-T
Change WAhout Notice.
135 120
24 13 -
pF pF pF dB % -
V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, I,,=300 mA, P,,=60.0 V,,=28.0 V, I,,=300 mA, P,,=60.0 W, F=l75 MHz W, F=175 MHz
60 -
3O:l
V,,=28.0 V, I,,=300 mA, P,#GO.O W, F=l75 MHz
M/A-COM,
Tel. (800) 3662266 Fax (800) 618-8883
n
Inc.
Asia/Pacific:
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor,
6OW, 28V
DU2860T
v2.00
Typical Broadband Performance
Curves
GAIN vs FREQUENCY
25 I’,,=28 V I,,=300 mA PO,=60 W ao-
EFFICIENCY
V,,=28
vs FREQUENCY
mA PO”,.=60 W
V I,,=300
10
-
50
100
150
200
2.5
50
100
1.50
200
FREQUENCY
(MHz)
FREQUENCY
(MHz)
POWER OUTPUT
801 V,,=20
vs POWER INPUT
mA
1
V I,,=300
0
0.5
1
1.5
2
2.5
2.75
3
POWER INPUT(W)
Specifications Subject to Change Wiiout
Notice.
MIA-COM,
Inc.
Tel. (800) Fax (800) 366-2266 618-8883 m Asia/Pacific: Tel. Fax +81 +81 (0...
