DU2880

an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O.O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo.o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, V,,=O.O V v, v,,=o.o v Test Conditions Leakage Current LeakageCurrent ‘DSS ‘GSS V GSITHI GM C ISS C ass %s GP % VSWR-T 13 60 2.0 2.0 Gate Threshold Voltage ForwardTransconductance InputCapacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance 6.0 180 160 32 3O:l V, 1,,=400.0 mA V, 1,,=4.0 A, AV,,=l V, F=l .O MHz V, F=l .O MHz V, F=l .O MHz V, I,,=400 V. I,,=400 V, I,,=400 mA, P,,=80.0 mA, P,,=80.0 W, F=175 MHz W, F=175 MHz .O V, 80 us Pulse mA, P,,,r=80.0 W, F=175 MHz Specifications Subject to Change Without Notice. M/A-COM, North America: Tel. (BOO) 366-2266 Fax (800) 618-8883 n inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 8OW, 28V DU2880T v2.00 Typical Broadband Performance Curves EFFICIENCY V,,=28 vs FREQUENCY mA PO,,=80...