an
AMP
company
RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
. N-Channel Enhancement Mode Device l DMOS S...
an
AMP
company
RF MOSFET Power
Transistor, 8OW, 28V 2 - 175 MHz
Features
. N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices
DU2880V
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation ( JunctionTemperature I StorageTemperature Thermal Resistance 1 ( I
VOS VGS ‘OS P, T, T,,, 0JC I I
65 20 8’ 206 ZOO
I I
” ” A w I
I
(
“C
“‘2
I
(
( -55 to +150 0.65
“CM,
Electrical Characteristics
at 25°C
* Per Side
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor,
8OW, 28V
DU2880V
v2.00
Typical Broadband
Performance
Curves
GAIN vs FREQUENCY
V,,=28 V I,,=400 mA PO,=80 W ‘O /
EFFICIENCY
V,,=28
vs FREQUENCY
mA P,,=80 W
V I,,=400
m^ 0 g 20 d
10 25 50 100 150 175
50 25 50 100 125
FREQUENCY (MHz)
FREQUENCY (MHz)
POWER OUTPUT vs POWER INPUT
,20 , V,,=28V I,,=400
POWER OUTPUT
,
90
vs SUPPLY
VOLTAGE
W
mA
1
-
F=l75
MHz I,,=400
mA P,,=l.5
75
I
15 0 ' 0 0.2 0.4 0.6 1 1.5 2 2.5 3 I 3.5 16 20 25 30
POWER INPUT(W)
SUPPLY VOLTAGE(V)
Specifications Subject to Change Without Notice.
M/A-COM,
Inc.
Tel. (800) 366-2266 Fax (800) 618-8883...
