61LV25616AL

IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES High-speed access time: — 10, 12 ns CMOS low power operation Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by TTL compatible interface levels Single 3.3V power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available ISSI FEBRUARY 2003 ® DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm). FUNCTIONAL BLOCK DIAGRAM A0-A17 DECODER 256K x 16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE WE UB LB CONTROL CIRCUIT Copyright © 2003 Integrated Sili...