66116 Datasheet: Single Channel Optocoupler Electrically Similar to 4N47-4N49 Coaxial or Bulkhead Mount packages





66116 Single Channel Optocoupler Electrically Similar to 4N47-4N49 Coaxial or Bulkhead Mount packages Datasheet

Part Number 66116
Description Single Channel Optocoupler Electrically Similar to 4N47-4N49 Coaxial or Bulkhead Mount packages
Manufacture Micropac Industries
Total Page 2 Pages
PDF Download Download 66116 Datasheet PDF

Features: Single Channel Optocoupler 66116 Elect rically Similar to 4N47-4N49 Coaxial or Bulkhead Mount packages Mii OPTOELECT RONIC PRODUCTS DIVISION Features: • • • • • • High reliability Ba se lead provided for conventional trans istor biasing Very high gain, high volt age transistor Hermetically sealed for reliability and stability Stability ove r wide temperature range High voltage e lectrical isolation Applications: • • • • Line Receivers Switchmode P ower Supplies Signal ground isolation P rocess Control input/output isolation DESCRIPTION Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototrans istor packaged in a hermetically sealed metal case. These devices can be teste d to customer specifications, as well a s to MIL-PRF-38534 H&K quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Out put Voltage............................ ....................................... ....................................................................................

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66116
Single Channel Optocoupler
Electrically Similar to 4N47-4N49
Coaxial or Bulkhead Mount packages
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
High reliability
Base lead provided for conventional transistor
biasing
Very high gain, high voltage transistor
Hermetically sealed for reliability and stability
Stability over wide temperature range
High voltage electrical isolation
Applications:
Line Receivers
Switchmode Power Supplies
Signal ground isolation
Process Control input/output isolation
DESCRIPTION
Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a
hermetically sealed metal case. These devices can be tested to customer specifications, as well as to MIL-PRF-38534 H&K
quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................ ±1kV
Collector-Base Voltage ........................................................................................................................................................... 45V
Collector-Emitter Voltage (See Note 1) .................................................................................................................................. 40V
Emitter-Base Voltage................................................................................................................................................................ 7V
Input Diode Reverse Voltage.................................................................................................................................................... 2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2) ....................................40mA
Continuous Collector Current ..............................................................................................................................................50mA
Peak Diode Current (See Note 3)............................................................................................................................................. 1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4) ................................300mW
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C
Storage Temperature..........................................................................................................................................-65°C to +125°C
Lead Temperature (1/16” (1.6mm) from case for 10 seconds).......................................................................................... 240°C
* JEDEC registered data
Package Dimensions
Base
Collector
Emitter
Case Lead
Schematic Diagram
AC
E
Case Lead
K
ANODE
CATHODE
Notes:
1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.
2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C.
3. This value applies for tw1us. PRR<300 pps.
4. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
B
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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