6AM14

6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at 6 Drive operation Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Pch*2 Tch Tstg Nch 60 ±20 7 28 7 42 4.8 150 –55 to +150 Pch –60 ±20 –7 –28 –7 Unit V V A A A W W °C °C 2 6AM14 Electrical Characteristics N Channel (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min Typ — — — — — 0.14 Max — — ±10 250 1.5 0.2 Unit V V µA µA V Ω Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 4 A VGS = 4 V*1 — 0.22 0.5 Ω ID = 2 A VGS = 2.5 V*1 Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A VDS = 10 V*1 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Ciss Coss Crss td(on) tr td(off) tf VDF trr — — — — — — — — — 500 240 30 15 90 110 250 1.0 170 — — — — — — — — — pF pF pF ns ns ns ns V ns IF = 7 A...