LOGIC ISOLATION. 6N135 Datasheet

6N135 Datasheet PDF, Equivalent


Part Number

6N135

Description

IRED & PHOTO IC (DIGITAL LOGIC ISOLATION)

Manufacture

Toshiba Semiconductor

Total Page 8 Pages
PDF Download
Download 6N135 Datasheet


6N135 Datasheet
TOSHIBA Photocoupler GaAAs Ired & Photo IC
6N135, 6N136
Digital Logic Isolation
Line Receiver
Power Supply Control
Switching Power Supply
Transistor Inverter
6N135,6N136
Unit: mm
The TOSHIBA 6N135 and 6N136 consists of a high emitting diode and a
one chip photo diodetransistor.
Each unit is 8lead DIP package.
Isolation voltage: 2500 Vrms (min)
High speed: tpHL, tpLH = 0.5 μs (typ.) (RL = 1.9k)
TTL compatible
If base pin is open, output signal will be noisy by environmental
condition. For this base, TLP550 is suitable
UL recognized: UL1577, file no. E67349
TOSHIBA
1110C4
Weight: 0.54 g (typ.)
Pin Configurations
18
27
36
45
1 : N.C.
2 : ANODE
3 : CATHODE
4 : N.C.
5 : EMITTER
6 : COLLECTOR
7 : BASE, ANODE
8 : CATHODE
IF
VF 2
3
ICC
IB
IO
8 VCC
7 VB
6 VO
5 GND
Start of commercial production
1982/10
1 2014-09-22

6N135 Datasheet
Absolute Maximum Ratings (Ta = 25°C)
6N135,6N136
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
Pulse forward current
(Note 2)
Total pulse forward current
(Note 3)
Reverse voltage
Diode power dissipation
(Note 4)
Output current
Peak output current
Emitterbase reverse voltage (pin 57)
Supply voltage
Output voltage
Base current (pin 7)
Output power dissipation
(Note 5)
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
(Note 6)
Isolation voltage
(Note 7)
IF
IFP
IFPT
VR
PD
IO
IOP
VEB
VCC
VO
IB
Po
Topr
Tstg
Tsol
BVS
25
50
1
5
45
8
16
5
0.5 to 15
0.5 to 15
5
100
55 to 100
55 to 125
260
2500
mA
mA
A
V
mW
mA
mA
V
V
V
mA
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
Derate 0.8 mA above 70°C.
50% duty cycle, 1ms pulse width.
Derate 1.6 mA / °C above 70°C.
Pulse width 1μs, 300pps.
Derate 0.9 mW / °C above 70°C.
Derate 2 mW / °C above 70°C.
Soldering portion of lead: Up to 2mm from the body of the device.
R.H. 60%, AC, 1minute
2 2014-09-22


Features Datasheet pdf TOSHIBA Photocoupler GaAℓAs Ired & Pho to IC 6N135, 6N136 Digital Logic Isolat ion Line Receiver Power Supply Control Switching Power Supply Transistor Inver ter 6N135,6N136 Unit: mm The TOSHIBA 6N135 and 6N136 consists of a high emit ting diode and a one chip photo diode transistor. Each unit is 8−lead DIP package. • Isolation voltage: 2500 V rms (min) • High speed: tpHL, tpLH = 0.5 μs (typ.) (RL = 1.9kΩ) • TTL c ompatible • If base pin is open, outp ut signal will be noisy by environmenta l condition. For this base, TLP550 is s uitable • UL recognized: UL1577, file no. E67349 TOSHIBA 11−10C4 Weight : 0.54 g (typ.) Pin Configurations 18 27 36 45 1 : N.C. 2 : ANODE 3 : CATHO DE 4 : N.C. 5 : EMITTER 6 : COLLECTOR 7 : BASE, ANODE 8 : CATHODE IF VF 2 3 ICC IB IO 8 VCC 7 VB 6 VO 5 GND Sta rt of commercial production 1982/10 1 2 014-09-22 Absolute Maximum Ratings (Ta = 25°C) 6N135,6N136 Characteristic Symbol Rating Unit Forward current (Note 1) Pulse forward current (Note 2) De.
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