7413 Id=12A Datasheet

7413 Datasheet, PDF, Equivalent


Part Number

7413

Description

Power MOSFET(Vdss=30V/ Id=12A)

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download 7413 Datasheet


7413
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
30V
PD- 91330F
IRF7413
HEXFET® Power MOSFET
RDS(on) max(mW) ID
11@VGS = 10V 12A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
12
9.6
96
2.5
0.02
± 20
1.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
3/19/02

7413
IRF7413
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.03
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
11
18
–––
1.0
25
100
-100
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.2A ƒ
VGS = 4.5V, ID = 6.0A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
16 ––– ––– S VDS = 10V, ID = 7.2A
Qg Total Gate Charge
Qgs Gate-to-Source Charge
––– 44 66
ID = 7.2A
––– 7.9 ––– nC VDS = 24V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 9.2 –––
––– 8.8 –––
VGS = 10V,
VDD = 100V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 8.0 ––– ns ID = 7.2A
––– 35 –––
RG = 6.2
––– 14 –––
VGS = 10V ƒ
––– 1670 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 670 –––
VDS = 25V
––– 100 ––– pF ƒ = 1.0MHz
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2290 –––
––– 680 –––
––– 1020 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
Typ.
–––
–––
Max.
120
7.2
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 3.1
––– 96
––– 1.0
50 75
74 110
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 7.2A, VGS = 0V ƒ
TJ = 25°C, IF = 7.2A
di/dt = 100A/µs ƒ
www.irf.com


Features PD- 91330F SMPS MOSFET Applications l H igh frequency DC-DC converters IRF7413 HEXFET® Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefit s l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001 ) l Fully Characterized Avalanche Volta ge and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Dr ain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Curren t  Power Dissipation„ Linear Deratin g Factor Gate-to-Source Voltage Peak Di ode Recovery dv/dt † Operating Junctio n and Storage Temperature Range Solderi ng Temperature, for 10 seconds Max. 12 9.6 96 2.5 0.02 ± 20 1.0 -55 to + 150 300 (1.6mm from case ) Units A W W/° C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. .
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