KSD261

KSD261 KSD261 Low Frequency Power Amplifier Complement to KSA643 Collector Power Dissipation : PC=500mW Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 500 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=0.1A IC=0.5A, IB=50mA 40 0.18 Min. 40 20 5 0.1 0.1 400 0.4 V Typ. Max. Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSD261 Typical Characteristics 500 450 1000 IB = 2.0mA IB = 1.8mA VCE = 1V IC[mA], COLLECTOR CURRENT 400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 IB = 1.4mA IB = 1.2mA IB = 1.0mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA hFE, DC CURRENT GAIN IB = 1.6m...