KM23C4100DET

KM23C4100D(E)T 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) Fast access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package -. KM23C4100D(E)T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C4100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 524,288 x 8 bit(byte mode) or as 262,144 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23C4100D(E)T is packaged in a 44-TSOP2. FUNCTIONAL BLOCK DIAGRAM A17 X BUFFERS AND DECODER MEMORY CELL MATRIX (262,144x16/ 524,288x8) PRODUCT INFORMATION Product KM23C4100DT KM23C4100DET Operating Temp 0°C~70°C -20°C~85°C Vcc Range 5.0V Speed (ns) 80 . . . . . . . . A0 A-1 Y BUFFERS AND DECODER SENSE AMP. DATA OUT BUFFERS PIN CONFIGURATION N.C 1 2 3 4 5 6 7 8 9 44 N.C 43 N.C 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 . . . CE OE BHE CONTROL LOGIC Q0/Q8 Q7/Q15 N.C A17 A7...