KM29U128T

KM29U128T, KM29U128IT Document Title 16M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1) Changed tPROG Parameter : 1ms(Max.) → 500µs(Max.) 2) Changed tBERS Parameter : 4ms(Max.) → 3ms(Max.) 3) Changed Input and Output Timing Level 0.8V and 2.0V → 1.5V 1.1 1) Changed tR Parameter : 7 µs(Max.) → 10µs(Max.) 2) Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.) Spare Array 3 cycles(Max.) 3) Added CE don’ t care mode during the data-loading and reading April 10th 1999 Final Draft Date April 10th 1998 July 14th 1998 Remark Preliminary Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 KM29U128T, KM29U128IT 16M x 8 Bit NAND Flash Memory FEATURES Voltage supply : 2.7V~3.6V Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte 528-Byte Page Read Operation - Random Access : 10µ s(Max.) - Serial Page Access : 50ns(Min.) Fast Write Cycle Time - Program time : 200µ s(typ.) - Block Erase time : 2ms(typ.) Command/Address/Data Multiplexed I/O port Hardware Data Protection - Program/Erase Lockout During Power...