KM29W040AT

KM29W040AT, KM29W040AIT Document Title 512K x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. 1) Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V Data Sheet 1999 1) Added CE don’ t care mode during the data-loading and reading Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 KM29W040AT, KM29W040AIT 512K x 8 Bit NAND Flash Memory FEATURES Voltage Supply: 3.0V~5.5V Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500µs - Block Erase : 4K Byte in 6ms 32-Byte Frame Read Operation - Random Access : 15 µs(Max.) - Serial Frame Access : 120ns(Min.) Command/Address/Data Multiplexed I/O port Low Operation Current (Typical) - 10µA Standby Current - 10mA Read/ Program/Erase Current Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) FLASH MEMORY GENERAL DESCRIPTION The KM29W040A is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digita...