KM416C256D

KM416C256D, KM416V256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. ¡Ü Fast Page Mode operation 2 CAS Byte/Wrod Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in 40-pin SOJ 400mil and44(40)-pin TSOP(II) 400mil packages Triple +5V¡¾10% power supply(5V product) Triple +3.3V¡¾0.3V power supply(3.3V product) FEATURES ¡Ü ¡Ü Part Identification - KM416C256D/DL (5V, 512K Ref.) - KM416V256D/DL (3.3V, 512K Ref.) ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü Active Power Dissipation Unit : mW Speed -5 -6 -7 3.3V(512 Ref.) 325 290 5V(512 Re...