KM416C4000B

KM416C4000B, KM416C4100B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - KM416C4000B(5.0V, 8K Ref.) - KM416C4100B(5.0V, 4K Ref.) Active Power Dissipation Unit : mW Speed -45 -5 -6 Refresh Cycles Part NO. KM416C4000B* KM416C4100B Refresh cycle 8K 4K Refresh time Normal 64ms RAS UCAS LCAS W Fast Page Mode operation 2CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability TTL(5.0V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic TSOP(II) package +5.0V±10% power supply 4K 715 660 605 8K 550 495 440 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer VBB Generator * Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden r...