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KM416RD8AS

Samsung semiconductor

128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package

KM416RD8AS Target Direct RDRAM™ 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks for Consumer Package Direct RDRAMTM...


Samsung semiconductor

KM416RD8AS

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Description
KM416RD8AS Target Direct RDRAM™ 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks for Consumer Package Direct RDRAMTM Revision 0.9 July 1999 Rev. 0.9 July 1999 KM416RD8AS Revision History Version 0.9 (July 1999) -Target - Based on the Rambus Datasheet ver. 0.9. - For Consumer Package. Target Direct RDRAM™ Rev. 0.9 July 1999 KM416RD8AS ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Target Direct RDRAM™ KM 4 XX XX XX X X - X X XX SAMSUNG Memory Device Organization Product Density Speed tRAC(Row Access Time) Power & Refresh Package Type Revision 1. SAMSUNG Memory 2. Device - 4 : DRAM 7. Package Type - C : u - BGA(CSP-Forward) - D : u - BGA(CSP-Reverse) - W : WL - CSP - S : u-BGA For Consumer Package 3. Organization - 16 : x16 bit - 18 : x18 bit 8. Power & Refresh - Blank : Normal Power Self Refesh(32m/8K, 3.9us) -L : Low Power Self Refesh(32m/8K, 3.9us) -R : Normal Power Self Refesh(32m/16K, 1.9us) -S : Low Power Self Refesh(32m/16K, 1.9us) 4. Product - RD : Direct RAMBUS DRAM 5. Density - 2 : 2M - 4 : 4M - 8 : 8M - 16 : 16M 9. tRAC(Row Access Time) - Blank : for Daisy Chain Sample -M : 40ns -K : 45ns -G : 53.3ns - B~D, F, J, L, N~ : Reserved 6. Revision - Blank : 1st Gen. -A : 2nd Gen. 10. Speed - DS : for Daisy Chain Sample - 80 : 800Mbps (400MHz) - 70 : 711Mbps (356MHz) - 60 : 600Mbps (300MHz) Rev. 0.9 July 1999 KM416RD8AS Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications i...




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