KM416S8030

KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst Read Single-bit Write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part NO. KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL KM416S8030T-G/F10 MAX Freq. 125MHz 100MHz 100MHz 100MHz LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 2M x 16 Sense AMP 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length LRAS LCBR LCKE L...