KM41C4000D

KM41C4000D, KM41V4000D CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version. This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems. FEATURES Part Identification - KM41C4000D/D-L(5V, 1K Ref.) - KM41V4000D/D-L(3.3V, 1K Ref.) Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (3.3V, L-ver only) Fast parallel test mode capability TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Common I/O using early write Active Power Dissipation Unit : mW Speed -5 -6 -7 3.3V 220 200 5V 470 415 360 JEDEC Standard pinout Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages +5V±10% power supply(5V product) +3.3V±0.3V power supply(3.3V product) FUNCTIONAL...