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KM44C1000D Dataheets PDF



Part Number KM44C1000D
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
Datasheet KM44C1000D DatasheetKM44C1000D Datasheet (PDF)

KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refre.

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KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in 3.3V Low power version. This 1Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems. FEATURES • Part Identification - KM44C1000D/D-L(5V, 1K Ref.) - KM44V1000D/D-L(3.3V, 1K Ref.) • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (3.3V, L-ver only) • Fast parallel test mode capability • TTL(5V)/LVTTL(3.3V) compatible inputs and outputs • Early write or output enable controlled write • Active Power Dissipation Unit : mW Speed -5 -6 -7 3.3V 220 200 5V 470 415 360 • JEDEC Standard pinout • Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages • Single +5V±10% power supply(5V product) • Single +3.3V±0.3V power supply(3.3V product) FUNCTIONAL BLOCK DIAGRAM • Refresh Cycles Part NO. KM44C1000D KM44V1000D Refresh cycle 1K Refresh Period Normal 16ms L-ver 128ms Refresh Timer Refresh Control Row Decoder Sense Amps & I/O Data in Buffer RAS CAS W Control Clocks VBB Generator Vcc Vss • Performance Range Speed -5 -6 -7 Refresh Counter tRAC 50ns 60ns 70ns tCAC 15ns 15ns 20ns tRC 90ns 110n 130n tPC 35ns 40ns 45ns Remark 5V only 5V/3.3V 5V/3.3V A0~A9 Col. Address Buffer Row Address Buffer Memory Array 1,048,576 x4 Cells DQ0 to DQ3 Data out Buffer Column Decoder OE SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. KM44C1000D, KM44V1000D CMOS DRAM PIN CONFIGURATION (Top Views) •KM44C/V1000DJ •KM44C/V1000DT DQ0 DQ1 W RAS A9 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VSS DQ3 DQ2 CAS OE A8 A7 A6 A5 A4 DQ0 DQ1 W RAS A9 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VSS DQ3 DQ2 CAS OE A8 A7 A6 A5 A4 ( SOJ ) ( TSOP-II ) Pin Name A0 - A9 DQ0 - 3 VSS RAS CAS W OE VCC Pin function Address Inputs Data In/out Ground Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power(+5V) Power(+3.3V) KM44C1000D, KM44V1000D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol 3.3V VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6 -55 to +150 600 50 Rating 5V CMOS DRAM Units -1 to +7.0 -1 to +7.0 -55 to +150 600 50 V V °C mW mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol Min VCC VSS VIH VIL 3.0 0 2.0 -0.3*2 3.3V Typ 3.3 0 Max 3.6 0 VCC+0.3*1 0.8 Min 4.5 0 2.4 -0.1*2 5V Typ 5.0 0 Max 5.5 0 VCC+1.0*1 0.8 V V V V Units *1 : VCC +1.3V/15ns(3.3V), VCC +2.0V/20ns(5V), Pulse width is measured at VCC *2 : - 1.3V/15ns(3.3V), - 2.0V/20ns(5V), Pulse width is measured at VSS DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Input Leakage Current (Any input 0≤VIN≤VCC+0.3V, all other input pins not under test=0 Volt) 3.3V Output Leakage Current (Data out is disabled, 0V≤VOUT ≤VCC) Output High Voltage Level(IOH=-2mA) Output Low Voltage Level(IOL=2mA) Input Leakage Current (Any input 0≤VIN≤VCC+0.5V, all other input pins not under test=0 Volt) 5V Output Leakage Current (Data out is disabled, 0V≤VOUT ≤VCC) Output High Voltage Level(IOH=-5mA) Output Low Voltage Level(IOL=4.2mA) Symbol II(L) IO(L) VOH VOL II(L) IO(L) VOH VOL Min -5 -5 2.4 -5 -5 2.4 Max 5 5 0.4 5 5 0.4 Units uA uA V V uA uA V V KM44C1000D, KM44V1000D Max KM44V1000D ICC1 ICC2 ICC3 Don′t Care Don′t Care Don′t Care -5 -6 -7 Don′t Care -5 -6 -7 -5 -6 -7 Don′t Care -5 -6 -7 Don′t Care Don′t Care 60 55 1 60 55 45 40 0.5 100 60 55 200 150 CMOS DRAM DC AND OPERATING CHARACTERISTICS (Recommend operating conditions unless otherwise noted.) Symbol Power Speed Units KM44C1000D 85 75 65 2 85 75 65 65 55 45 1 200 85 75 65 300 mA mA mA mA mA mA mA mA mA mA mA uA mA mA mA uA uA ICC4 Don′t Care Normal L Do.


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