KM44C4103C

KM44C4003C, KM44C4103C CMOS DRAM 4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. Four separate CAS pins provide for seperate I/O operation allowing this device to operate in parity mode. This 4Mx4 Fast Page Mode Quad CAS DRAM family is fabricated using Samsung′s advanced CMOS process to realize high bandwidth, low power consumption and high reliability. FEATURES Part Identification - KM44C4003C/C-L (5V, 4K Ref.) - KM44C4103C/C-L (5V, 2K Ref.) Fast Page Mode operation Four seperate CAS pins provide for separate I/O operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast paralleltest mode capability TTL compatible inputs and outputs Unit : mW Early Write or output enable controlled write JEDEC Standard pinout 2K 605 550 Available in Plastic SOJ and TSOP(II) packages Single +5V±10% power supply Active Power Dissipation Refresh Cycle 4K -5 -6 495 440 Speed FUNCTIONAL BLOCK DIAGRAM ...