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KM48C2000B

Samsung semiconductor

2M x 8Bit CMOS Dynamic RAM with Fast Page Mode

KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM Thi...


Samsung semiconductor

KM48C2000B

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Description
KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES ¡Ü ¡Ü Fast Page Mode operation Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic SOJ and TSOP(II) packages Single +5V¡¾10% power supply (5V product) Single +3.3V¡¾0.3V power supply (3.3V product) Part Identification - KM48C2000B/B-L (5V, 4K Ref.) - KM48C2100B/B-L (5V, 2K Ref.) - KM48V2000B/B-L (3.3V, 4K Ref.) - KM48V2100B/B...




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