KM48C8104B

KM48C8004B, KM48C8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - KM48C8004B(5.0V, 8K Ref.) - KM48C8104B(5.0V, 4K Ref.) Active Power Dissipation Unit : mW Speed -45 -5 -6 Refresh Cycles Part NO. KM48C8004B* KM48C8104B 8K 550 495 440 Refresh cycle 8K 4K 4K 715 660 605 Refresh time Normal 64ms RAS CAS W Extended Data Out Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability TTL(5.0V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic SOJ and TSOP(II) packages +5.0V±10% power supply FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Refresh Control Refresh Counter Memory Array 8,388,608 x 8 Cells Sense Amps & I/O * Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden refresh mode :...