K9K1G08U0B

K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Advance Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 15 ) -Error in write or read operation ( page 16 ) -Program Flow Chart ( page 16 ) 3. Vcc range is changed -1.7V~1.95V ->1.65V~1.95V 4. 2.7V device is added 5. Multi plane operation and Copy-Back Program are not supported with 1.8V device. Draft Date Mar. 17th 2003 Oct. 11th 2004 Remark Advance Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Advance 128M x 8 Bit Bit NAND Flash Memory PRODUCT LIST Part Number K9K1G08R0B-G,J K9K1G08B0B-G,J K9K1G08U0B-G,J Vcc Range 1.65 ~ 1.95V 2.5 ~ 2.9V 2.7 ~ 3.6V X8 FBGA Organization PKG Type FEATURES Voltage Supply - 1.8V device(K9K1G08R0B) : 1.65 ~ 1.95V - 2.7V device(K9K1G08B0B) : 2.5 ~ 2.9V - 3.3V dev...