KSA1010

KSA1010 KSA1010 High Speed High Voltage Switching Industrial Use Complement to KSC2334 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 100 - 100 -7 -7 - 15 - 3.5 40 1.5 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSA1010 Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Test Condition IC = - 5A, IB1 = - 0.5A, L = 1mH IC = - 5A, IB1 = - IB2 = - 0.5A VBE(off) = 5V, L = 180µH Clamped IC = - 10A, IB1 = - 1A IB2 = 0.5A, VBE(off) = 5V L = 180µH, Clamped VCB = - 100V, IE = 0 VCE = - 100V, RBE = 51Ω TC = 125°C VCE = - 100V, VBE(off) = 1.5V VCE = - 100V, VBE(off) = 1.5V TC = 125°C VEB = - 5V, IC= 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A VCC = - 50V, IC = - 5A, IB1 = - IB2 = - 0.5A RL = 10Ω 40 40 20 Min. - 100 - 100 Max. Units V V VCEX(sus)2 Collector-Emitter Sustaining Voltage - 100 V ICBO ICER ICEX1 ICEX2 IEBO hFE1 ...