Document
KSA1015 — PNP Epitaxial Silicon Transistor
September 2015
KSA1015 PNP Epitaxial Silicon Transistor
Features
• Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815
Ordering Information
Part Number KSA1015GRTA KSA1015YTA
Marking A1015 A1015
123
Straight Lead Bulk Packing
TO-92
1. Emitter
12 3
2. Collector 3. Base
Bent Lead Tape & Reel Ammo Packing
Package TO-92 3L TO-92 3L
Packing Method Ammo Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
IC IB TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Junction Temperature Storage Temperature Range
-50 -50 -5 -150 -50 150 -55 to 150
V V V mA mA °C °C
© 2002 Fairchild Semiconductor Corporation KSA1015 Rev. 1.9
1
www.fairchildsemi.com
KSA1015 — PNP Epitaxial Silicon Transistor
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
Total Device Dissipation PD Derate Above 25°C
400 mW 3.2 mW/°C
RθJA Thermal Resistance, Junction to Ambient
312 °C/W
Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat)
fT
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product
Cob Output Capacitance
NF Noise Figure
Conditions
IC = -100 μA, IE = 0 IC = -10 mA, IB = 0 IE = -10 μA, IC = 0 VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -6 V, IC = -2 mA VCE = -6 V, IC = -150 mA IC = -100 mA, IB = -10 mA IC = -100 mA, IB = -10 mA VCE = -10 V, IC = -1 mA VCB = -10 V, IE = 0, f = 1 MHz
VCE = -6 V, IC = -0.1 mA, f = 100 Hz, RG = 10 kΩ
Min. -50 -50 -5
70 25
80
Typ. Max.
-0.1 -0.1 400 -0.1 -0.3 -1.1
Unit V V V μA μA
V V MHz
4 7 pF
0.5 6
dB
hFE Classification
Classification hFE1
O 70 ~ 140
Y 120 ~ 240
GR 200 ~ 400
© 2002 Fairchild Semiconductor Corporation KSA1015 Rev. 1.9
2
www.fairchildsemi.com
KSA1015 — PNP Epitaxial Silicon Transistor
IC[mA], COLLECTOR CURRENT
VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE
Typical Performance Characteristics
-50 -45
IB = -400μA -40 IB = -350μA -35 IB = -300μA -30 IB = -250μA -25 IB = -200μA -20 IB = -150μA -15 IB = -100μA
-10
IB .