DatasheetsPDF.com

KSA1015 Dataheets PDF



Part Number KSA1015
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet KSA1015 DatasheetKSA1015 Datasheet (PDF)

KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 Ordering Information Part Number KSA1015GRTA KSA1015YTA Marking A1015 A1015 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Bent Lead Tape & Reel Ammo Packing Package TO-92 3L TO-92 3L Packing Method Ammo Ammo Absolute Maximum Ratings Stresses exceeding the abso.

  KSA1015   KSA1015



Document
KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 Ordering Information Part Number KSA1015GRTA KSA1015YTA Marking A1015 A1015 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Bent Lead Tape & Reel Ammo Packing Package TO-92 3L TO-92 3L Packing Method Ammo Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO VCEO VEBO IC IB TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Junction Temperature Storage Temperature Range -50 -50 -5 -150 -50 150 -55 to 150 V V V mA mA °C °C © 2002 Fairchild Semiconductor Corporation KSA1015 Rev. 1.9 1 www.fairchildsemi.com KSA1015 — PNP Epitaxial Silicon Transistor Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max. Unit Total Device Dissipation PD Derate Above 25°C 400 mW 3.2 mW/°C RθJA Thermal Resistance, Junction to Ambient 312 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Cob Output Capacitance NF Noise Figure Conditions IC = -100 μA, IE = 0 IC = -10 mA, IB = 0 IE = -10 μA, IC = 0 VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -6 V, IC = -2 mA VCE = -6 V, IC = -150 mA IC = -100 mA, IB = -10 mA IC = -100 mA, IB = -10 mA VCE = -10 V, IC = -1 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, IC = -0.1 mA, f = 100 Hz, RG = 10 kΩ Min. -50 -50 -5 70 25 80 Typ. Max. -0.1 -0.1 400 -0.1 -0.3 -1.1 Unit V V V μA μA V V MHz 4 7 pF 0.5 6 dB hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 © 2002 Fairchild Semiconductor Corporation KSA1015 Rev. 1.9 2 www.fairchildsemi.com KSA1015 — PNP Epitaxial Silicon Transistor IC[mA], COLLECTOR CURRENT VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE Typical Performance Characteristics -50 -45 IB = -400μA -40 IB = -350μA -35 IB = -300μA -30 IB = -250μA -25 IB = -200μA -20 IB = -150μA -15 IB = -100μA -10 IB .


KSA1013 KSA1015 KSA1142


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)