KSA1150

KSA1150 KSA1150 Low Frequency Power Amplifier Collector Dissipation : PC = 300mW Complement to KSC2710 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -20 -5 -500 -700 300 150 -55 ~ 150 Units V V V mA mA mW °C °C * PW≤350ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -25V, IE=0 VEB= -3V, IC=0 VCE= -1V, IC= -100mA IC= -500mA, IB= -50mA IC= -500mA, IB= -50mA 40 -0.3 -1.0 Min. -40 -20 -5 -100 -100 400 -0.4 -1.3 V V Typ. Max. Units V V V nA nA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1150 Typical Characteristics -500 -450 1000 VCE =-1V IB = -1.6mA IB = -1.4mA IB = -1.2mA IB = -1.0mA IB ...