KSA1220

KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature TC=25°C unless otherwise noted Parameter : KSA1220 : KSA1220A : KSA1220 : KSA1220A Ratings - 120 - 160 - 120 - 160 -5 - 1.2 - 2.5 - 0.3 1.2 20 150 - 55 ~ 150 Units V V V V V A A A W W °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = - 120V, IE = 0 VEB = - 3V, IC = 0 VCE = - 5V, IC = - 5mA VCE = - 5V, IC = - 0.3A IC = - 1A, IB = - 0.2A IC = - 1A, IB = - 0.2A VCE = - 5V, IC = - 0.2A VCB = - 10, IE = 0 f = 1MHz 35 60 150 140 - 0.4 -1 175 26 Min. Typ. Max. -1 -1 320 - 0.7 - 1.3 V V MHz pF Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 ©2001 Fairchild Semiconductor Corporation Rev. A...