KSA1241

KSA1241 KSA1241 Power Amplifier Applications Low Collector-Emitter Saturation Voltage Complement to KSC3076 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IB IC PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Ratings - 55 - 50 -5 -1 -2 1 10 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = - 10mA, IB = 0 VCB = - 50V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 1.5A IC = - 1A, IB = - 0.05A IC = - 1A, IB = - 0.05A VCE = - 2V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC = - 30, IC = - 1A IB1 = - IB2 = - 0.05A RL = 30Ω 100 40 0.1 1 0.1 70 40 Min. - 50 Typ. Max. -1 -1 240 - 0.5 - 1.2 V V MHz pF µs µs µs Units V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1241 Package Demension...