KSA1298

KSA1298 KSA1298 Low Frequency Power Amplifier Complement to KSC3265 2 1 3 SOT-23 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature 1. Base 2. Emitter 3. Collector Ratings -30 -25 -5 -800 -160 200 150 -55 ~ 150 Units V V V mA mA mW °C °C Refer to KSA643 for graphs. Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -30V, IE=0 VBE= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA IC= -500mA, IB= -20mA VCE= -1V, IC= -10mA VCE= -5V, IC= -10mA VCB= -10V, IE= 0, f=1MHz -0.5 120 13 100 40 Min. -25 -5 -100 -100 320 -0.4 -0.8 V V MHz pF Typ. Max. Units V V nA nA hFE1 Classification Classification hFE1 Marking O 100 ~ 200 Y 160 ~ 320 J1 O hFE grade ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA1298 Package Demensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.9...