KSA1625

KSA1625 KSA1625 High Voltage Switch High Breakdown Voltage High Speed Switching 1 TO-92 1. Emitter 2. Collector 3. Base PNP Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation (Ta=25°C) Collector Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Ratings -400 -400 -7 -0.25 -0.5 -1.0 0.75 2 150 -55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Dc Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time Test Condition IC= -1mA, IB=0 VCB= -400V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -50mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC= -10mA VCB= -10V, f=1MHz IC= -100mA, RL=1.5kΩ IB1=- IB2= -10mA VCC= -150V 10 25 1 5 1 40 Min. -400 Max. -1 -1 200 -1 -1.2 V V MHz pF µs µs µs Units V µA µA hFE Classification Classification hFE M 40 ~ 80 L 60 ~ 120 K 100 ~ 200 ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 KSA1625 Typical Characteristics -0.5 1000 VCE= - 5V IC[A], COLLECTOR CURRE...