KSA642

KSA642 KSA642 Low Frequency Power Amplifier Complement to KSD227 Collector Power Dissipation : PC = 400mW Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 -300 -500 400 150 -55 ~ 150 Units V V V mA mA mW °C °C * PW≤10ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Test Condition IC= -100µA, IE=0 IC= -10mA. IB=0 IE = -10µA. IC=0 VCB= -25V, IE=0 VEB= -3V, IC=0 VCE= -1V, IC= -50mA IC= -300mA, IB= -30mA 70 -0.35 Min. -30 -25 -5 -100 -100 400 -0.6 V Typ. Max. Units V V V nA nA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA642 Typical Characteristics -200 -180 1000 IB =-1.6mA VCE = -1V IC[mA], COLLECTOR CURRENT -160 -140 -120 -100 -80 -60 -4...